The Properties of Textured GZO Film at Different Substrate Temperature

Abstract:

The Ga-doped ZnO (GZO) films were prepared by DC magnetron sputtering at different substrate temperature, followed by etching in 0.5%HCL solution for 15s to obtain textured surface. Optical and electrical properties, structural and surface morphology of thin films were investigated. The results indicated that the transmittance rate decreased and the C-axis preferred orientation of films enhanced with the increase of the substrate temperature. When temperature increased from room time (RT) to 200°C, the resistivity decreased and the quality crystal became better, while substrate temperature above 250°C, the resistivity increased,the deterioration of crystallinity emerged. For the textured film deposited at 200°C, it obtained the minimum resistivity of 0.84×10^-3/(Ω•cm) and had a good light trapping ability.

• Periodical: Advanced Materials Research (Volumes 479-481)
• Pages: 1805-1808
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.479-481.1805
• Online since: February 2012
• Authors: Li Xin Zeng, Hui Dong Yang, Bo Huang, Ji Sen Zhang
• Keywords: DC Magnetron Sputtering, GZO Films, Textured Surface

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