Using Ag95Al-Ti to Braze Si/SiC and Invar Alloy

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Abstract:

In this paper, the effect of different Ti content on the brazed joint microstructures was studied, including the reaction zone states, microstructures of the reaction interface on both ceramic and Invar alloy side. The added Ti content was 2%, 3%, 5%, 6% and 10%. The results showed that Ti had great effect on the thickness of reaction layer on the invar alloy side. Ti can inhibit the growth of the diffusion layer.

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Advanced Materials Research (Volumes 479-481)

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628-631

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February 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] J. Q. Li, G. M. Zhu. J. Mater. Sci. Lett., 2003, 22(10): p.759

Google Scholar

[2] A. E. Martinelli, R. A. L. Drew. Mater. Sci. Eng., vol.A191(1995): p.239

Google Scholar

[3] M. Claus, P. Ulrich. C/SiC high precision light-weighty components for optical applications. Bellingham: The International Society for Optical Engineering (2001)

Google Scholar

[4] F. Tamai, M. Naka. Microstructure of interface of SiC/Cu-Ag-Ti/Cu,Ni.Proceeding of Designing of Interfacial Structures in Advanced Materials and Their Joints,Japan,2002:p.634

Google Scholar

[5] F. Ono, S. Komatsu, Y. Chimi, N. Ishikawa. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol.230(2005), p.279

DOI: 10.1016/j.nimb.2004.12.055

Google Scholar

[6] J. Ke, C. Zhanhui, M. Qingsong. Mater. Sci. Eng. A, vol.390(2005), p.154

Google Scholar

[7] T. Fujio, N. Masaaki. Microstructure of interface of SiC/Cu-Ag-Ti/Cu, Ni [A]. Proceeding of Designing of Interfacial Structures in Advanced Materials and Their Joints [C]. Japan: 2002.p.634

Google Scholar

[8] H.J. Liu, J.C. Feng. J Mater. Sci. Lett., vol.19 (2000), p.1241

Google Scholar

[9] O. M. Akselsen. J Mater. Sci., 1992, vol.27(1992), p.(1989)

Google Scholar

[10] Anonymous. Mater. Tech., vol.14 (1999), p.53

Google Scholar