Low Temperature Wafer Direct Bonding Using Wet Chemical Treatment

Yan Li Zhao; Zi Jun Song; Yan Li; Hai Sheng San; Yu Xi Yu

doi:10.4028/www.scientific.net/AMR.482-484.2381

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 482-484Low Temperature Wafer Direct Bonding Using Wet...

Low Temperature Wafer Direct Bonding Using Wet Chemical Treatment

Abstract:

In this paper, the low-temperature (less than or equal to 400 °C) silicon wafer direct bonding technology using wet chemical surface treatment is proposed. For bonded pairs of silicon-oxide-covered wafers, the optimum process condition is established with respect to the experimental results of two different wet chemical processing methods. The bonding quality is evaluated through infrared transmission test and tensile test. Experimental results indicate that the bonding strength of the additional 29% NH3•H2O treated samples is about 7.2 MPa, while it is no more than 3.1 MPa for the only piranha (H2SO4/H2O2) solution and RCA1 (NH3•H2O/H2O2/H2O) solution cleaned samples. Effect of the pulling speed on tensile test is also investigated. The results show that the pulling speed effect should be considered during the tensile test.

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Periodical:

Advanced Materials Research (Volumes 482-484)

Pages:

2381-2384

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.482-484.2381

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Online since:

February 2012

Authors:

Yan Li Zhao, Zi Jun Song, Yan Li, Hai Sheng San, Yu Xi Yu

Keywords:

Chemical Activation, Low Temperature Bonding, Pulling Speed, Tensile Test, Wafer Direct Bonding

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