Effect of Interface States on the Open-Circuit Volatage in a-Si:H/c-Si Heterojunction Solar Cells

Lan E Luo; Chun Liang Zhong

doi:10.4028/www.scientific.net/AMR.485.454

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 485Effect of Interface States on the Open-Circuit...

Effect of Interface States on the Open-Circuit Volatage in a-Si:H/c-Si Heterojunction Solar Cells

Abstract:

The properties of the a-Si:H/c-Si interface are one of the critical issues for the photovoltaic application. The effects of the interface states on the open-circuit voltage VOC were performed by a set of simulations. VOC decreases with Dit increasing, especially at high values of Dit, since the interface states act as recombination centers to decrease the excess minority carrier density in c-Si. Since the conduction band offset ∆EC can saturate part of interface states, VOC increasing with ∆EC increasing.

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Periodical:

Advanced Materials Research (Volume 485)

Pages:

454-456

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.485.454

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Online since:

February 2012

Authors:

Lan E Luo, Chun Liang Zhong

Keywords:

a-Si:H/c-Si Heterojunctions, Interface State, Solar Cell

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References

[1] Y. Tsunomura, Y. Yoshimine, M. Taguchi, T. Baba, et al: Sol. Energy Mater. Sol. Cells doi: 10. 1016/j. solmat. 2008. 02. 037(2008).

Google Scholar

[2] E. Yablonovitch, D. L. Allara, C. C. Chang: Phys. Rev. Lett. vol. 57 (1986), p.249.

Google Scholar

[3] T.H. Wang, E. Iwaniczko, M.R. Page, et al: Thin Solid Films vol. 501 (2006), p.284–287.

Google Scholar

[4] C. Voz, I. Martin, A. Orpella, et al: Thin Solid Films vol. 430 (2003), p.270.

Google Scholar

[5] M. Nath, P. Chatterjee, J. Damon-Lacoste, et al: Journal of applied physics vol. 103 (2008), p.034506.

Google Scholar

[6] M. Schmidt, L. Korte, A. Laades, et al: Thin Solid Films vol. 515 (2007), p.7475–7480.

Google Scholar

[7] R. Stangl, A. Froitzheim, M. Kriegel, et al: AFORS-HET, a numerical PC-program for simulation of heterojunction solar cells, Version 1. 1 (open-source on demand), to be distributed for public use. In: Proc. PVSEC-19, 19th European Photovoltaic Solar Energy Confernce, Paris, France, p.1497 (2004).

DOI: 10.1109/pvsc.2005.1488441

Google Scholar

[8] F. A. Rubinelli: IEEE Transactions on Electron Devices vol. 39 (1992), p.2584.

Google Scholar

[9] C.L. Zhong: A Dissertation for the Degree of Doctor of Philosophy [D] (2011).

Google Scholar

[10] C. L. Zhong, R. H. Yao, K. W. Geng: Journal of Physics D: Applied Physics vol. 43 (2010), p.495102.

Google Scholar