Effect of the Impurity Concentration of a-Si:H on the Properties of a-Si:H/c-S Heterojunction Solar Cells

Lan E Luo; Chun Liang Zhong

doi:10.4028/www.scientific.net/AMR.485.461

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Effect of the Impurity Concentration of a-Si:H on the Properties of a-Si:H/c-S Heterojunction Solar Cells

Abstract:

Effect of the impurity concentration of a-Si:H, ND2, on the properties of a-Si:H/c-S heterojunction solar cells is studied by a set of AMPS simulations. The results show that the short-circuit current almost not depends on ND2. At a low doping level, the electric field redistributes in the c-Si depletion region and the barrier at the heterojunction interface hinders the collection of photogenerated holes. It results in an enhanced recombination inside the c-Si depletion region and the S-Shaped J-V characteristics. As a sequence, the open-circuit voltage VOC and the fill factor FF decreases with ND2 decreasing. However, at a high doping level, VOC and FF is independent on ND2 as the diffusion potential is mainly accommodated in the c-Si. So the efficiency increases with ND2 increasing at a low doping level, and then is independent on ND2 at a high doping level. Therefore, to improve the properties of a-Si:H/c-Si heterojunction solar cells, the a-Si:H layer should be highly doped.