Amorphous IGZO Nonvolatile Memory Thin Film Transistors Using Ta2O5 Gate Dielectric

C.J. Chiu; S.P. Chang; W.Y. Weng; S.J. Chang

doi:10.4028/www.scientific.net/AMR.486.233

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 486Amorphous IGZO Nonvolatile Memory Thin Film...

Amorphous IGZO Nonvolatile Memory Thin Film Transistors Using Ta₂O₅ Gate Dielectric

Abstract:

A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta₂O₅ gate insulator is proposed. The high-dielectric-constant material Ta₂O₅ was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (ΔV_th = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta₂O₅ can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.

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Periodical:

Advanced Materials Research (Volume 486)

Pages:

233-238

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.486.233

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Online since:

March 2012

Authors:

C.J. Chiu, S.P. Chang, W.Y. Weng, S.J. Chang

Keywords:

Amorphous Indium Gallium Zinc Oxide (A-IGZO), Non-Volatile Memory (NVM), Ta₂O₅, Thin Film Transistor

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References

[1] Dj.M. Maric, P.F. Meier and S.K. Estreicher: Mater. Sci. Forum Vol. 83-87 (1992), p.119.

Google Scholar

[2] Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono: Thin Solid Films Vol. 516 (2008), p.5899.

DOI: 10.1016/j.tsf.2007.10.051

Google Scholar

[3] K. Takechi, M. Nakata, K. Azuma, H. Yamaguchi, S. Kaneko: IEEE Tran. Electron. Dev. Vol. 56 (2009) , p.2165.

Google Scholar

[4] Y.K. Moon, S. Lee, D.H. Kim, D.H. Lee, C.O. Jeong, J. W. Park: Jpn. J. Appl. Phys. Vol. 48 (2009), p.031301.

Google Scholar

[5] C. Hasimoto, H. Oikawa, N. Honma: IEEE Trans. Electron Devices Vol. 36 (1989), p.14.

Google Scholar

[6] G.M. Choi, H.L. Tuller, J.S. Haggerty: J. Electrochem. Soc. Vol. 136 (1989), p.835.

Google Scholar

[7] D.H. Hensler, J.D. Cuthbert, R.J. Martin, P.K. Tien: Appl. Opt. Vol. 10 (1971), p.1037.

Google Scholar

[8] W. Andreoni, C. A. Pignedoli: Appl. Phys. Lett. Vol. 96 (2010), p.062901.

Google Scholar

[9] L. Zhang, J. Li, X.W. Zhang, D.B. Yu, X.Y. Jiang, Z.L. Zhang: Phys. Status Solidi A. Vol. 207 (2010), p.1815.

Google Scholar