Influence of AgNO3 on Photoluminescence Properties of Porous Silicon

Hong Yan Zhang; Xiao Yi Lv; Zhen Hong Jia

doi:10.4028/www.scientific.net/AMR.486.239

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 486Influence of AgNO3 on Photoluminescence Properties...

Influence of AgNO₃ on Photoluminescence Properties of Porous Silicon

Abstract:

Porous silicon (PS) has the strong photoluminescence (PL) at room temperature and high specific surface. In this paper, we have fabricated the PS coated with silver nanoparticles as a substrate. The result shows that the substrate made in this way is stable for more than twenty days and the strong PL intensity of PS is around 584nm after immersed into solution of AgNO_3.The formation of SiAg bond was demonstrated to be responsible for the improvement of PL properties.

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Periodical:

Advanced Materials Research (Volume 486)

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239-242

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.486.239

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Online since:

March 2012

Authors:

Hong Yan Zhang, Xiao Yi Lv, Zhen Hong Jia

Keywords:

Photoluminescence (PL), Porous Silicon, Silver Nanoparticle

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