Effect of Growth Parameters on Single Crystal Diamond Deposition by DC Arc Plasma Jet CVD

Abstract:

Homoepitaxial diamond layers were grown on commercial 3.5 x 3.5 x 1.2 mm3 HPHT synthetic type Ib (100) single crystal diamond plates using a DC Arc Plasma Jet CVD operating at gas recycling mode. The effects of substrate temperature and CH4/H2 ratio on the surface morphology, the growth rate and the quality of the synthesized diamond have been studied using optical microscopy and Raman spectroscopy. With no intentional nitrogen added, the growth rate up to 12.3µm/h has been obtained in the single crystal diamond sample deposited at 1000 °C with CH4/H2=0.625%, exhibiting relatively smooth surface morphology without any growth hillocks nor non-epitaxial crystallites, and presenting the typical feature of the epitaxial step-flow growth. The full width at half maximum (FWHM) of the Raman spectra was 2.08 cm-1, which was close to that of the natural type IIa single crystal diamond.

• Periodical: Advanced Materials Research (Volumes 490-495)
• Pages: 3094-3099
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.490-495.3094
• Online since: March 2012
• Authors: Li Fu Hei, Jie Liu, Fan Xiu Lu, Cheng Ming Li, Jian Hua Song, Guang Chao Chen
• Keywords: CVD, Growth Rate, Morpholoy, Single Crystal Diamond

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