Dislocations in Gan Grown on Silicon

Qiu Yan Hao; Xin Jian Xie; Cai Chi Liu; Li Wei Zhao

doi:10.4028/www.scientific.net/AMR.502.51

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 502Dislocations in Gan Grown on Silicon

Dislocations in Gan Grown on Silicon

Abstract:

In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studied. Wet etching can effectively reveal the dislocations in GaN, and the hexagonal etch pits are the emergence of dislocations. After etching in the aqueous KOH: H2O =3:20 (m:m), there are more pits with longer etch time. SEM shows that there are more hexagonal etch pits near the micro-cracks because many dislocations are induced by micro-cracks. In the experiment, ribbon slopes in the two sides of the pits are observed, and they are paralleled to each other. If the growth time prolonged, the ribbon slopes would disappear and the surface become flat, and this mechanism is discussed in this paper.

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Periodical:

Advanced Materials Research (Volume 502)

Pages:

51-55

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.502.51

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Online since:

April 2012

Authors:

Qiu Yan Hao, Xin Jian Xie, Cai Chi Liu, Li Wei Zhao

Keywords:

AFM, Dislocation, Gallium Nitride (GaN), Pyramidal Defects, Wet Etching

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References

[1] L.P. Yu, J.Y Shi, Y.Z Wang, H Zhang, Study of different type of dislocations in GaN thin films, J. Cryst. Growth. 268(2004) 484-488

DOI: 10.1016/j.jcrysgro.2004.04.077

Google Scholar

[2] G.Q. Hu, X. Kong, L. Wan, Y.Q. Wang, X.F. Duan, Y.Lu, X.L. Liu,Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition, J. Cryst. Growth. 256(2003) 416-432

DOI: 10.1016/s0022-0248(03)01368-x

Google Scholar

[3] Wei Yang, Scott A. McPherson, Zhingang Mao, Stusrt McKeman, C.Barry Carter, Single-crystal GaN pyramids grown on (111)Si substrates by selective lateral overgrowth, J. Cryst. Growth. 204(1999)270-274

DOI: 10.1016/s0022-0248(99)00205-5

Google Scholar

[4] J.L. Weyher, P.D. Brown, J.L. Rouviere,T Wosinski, A.R.A. Zauner, I.Grzegory, J. Cryst. Growth. 210(2000)151-156

DOI: 10.1016/s0022-0248(99)00669-7

Google Scholar

[5] J. L. Weyher, S. Müller, I. Grzegory, S. Porowski, Chemical polishing of bulk and epitaxial GaN, J. Cryst. Growth. 182(1997)17-22

DOI: 10.1016/s0022-0248(97)00320-5

Google Scholar

[6] S. Zamir, B Meyler, E Zolotoyabko, J Salzman, J. Cryst. Growth. 218 (2000) 181-190

Google Scholar

[7] V. Lebedev, J. Jinschek, J. Kräußlich, U. Kaiser, B. Schröter, W. Richter, J. Cryst. Growth. 230( 2001)426-431

DOI: 10.1016/s0022-0248(01)01241-6

Google Scholar

[8] Pei-Yen Lin, YewChung Sermon Wu, The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films, Materials Chem. Phys. 80(2003)397-401

DOI: 10.1016/s0254-0584(03)00109-3

Google Scholar