Fabrication and Characterization of Transparent Conducting ZnO: Al Films for Organic Optoelectronic Devices

Abstract:

Al-doped ZnO (ZnO:Al) thin films were deposited on glass substrates by rf magnetron sputtering technique. The effect of discharge power on the structural, optical and electrical characteristics of ZnO:Al films was investigated by X-ray diffraction (XRD), four-probe meter and optical transmission spectroscopy. The results show that the films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The highest figure of merit of 5.58×10-3 -1 is obtained from the film prepared at the discharge power of 200 W. The average optical transmittance in the visible range of the films is over 78.2%.

• Periodical: Advanced Materials Research (Volume 502)
• Pages: 72-76
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.502.72
• Online since: April 2012
• Authors: Zhi You Zhong, J. Zhou, J.H. Gu, X. He, J. Hou, C.Y. Yang
• Keywords: Electrical Properties, Optical Property, Transparent Conducting Films

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