Researched on Dielectric Properties of Alumina Substrate Material

Chen Jie Guo; Chang Song Zhang

doi:10.4028/www.scientific.net/AMR.502.87

Paper Titles

Fabricate Mould Insert with Conformal Cooling Channel Using Selective Laser Melting
p.67

Fabrication and Characterization of Transparent Conducting ZnO: Al Films for Organic Optoelectronic Devices
p.72

Properties of Indium Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Substrate Temperatures
p.77

Study on Dielectric Relaxation in BiFeO₃/Bi_3.25La_0.75Ti₃O₁₂ Film
p.82

Researched on Dielectric Properties of Alumina Substrate Material
p.87

Study on Temperature Sensibility of Nano-Copper/Paraffin Materials
p.91

Study on Floatability and Separation of High Ash and Difficult Floatable Coal
p.96

Effect of Filler Loading and Temperature on Electrical Resistivity of Stainless Steel Fiber/PA6 Conductive Polymer Composites
p.101

Study on the Optical and Electrical Properties of Organic Semiconductor Thin Films for OLEDs
p.106

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 502Researched on Dielectric Properties of Alumina...

Researched on Dielectric Properties of Alumina Substrate Material

Abstract:

In this paper, Al₂O₃-Bi₂O₃ was choosed as chip fuse matrix material. Composition of Al₂O₃-Bi₂O₃ ceramics samples in different sintering temperature was studied by X-ray diffraction, and dielectric properties of samples under different frequency was measured. The results show that the mixture of Bi₂O₃ in Al₂O₃ ceramics can improve the sintering activity of Al₂O₃ ceramics, and thus greatly reduced the ceramic sintering temperature. It is concluded that the main crystalline phase is pure α-Al₂O₃ without miscellaneous phase distribution. The distribution of fracture morphology is uniform without the existence of apparent stomatal, the dielectric constant and dielectric loss was studied.

You might also be interested in these eBooks

Progress in New Materials and Mechanics Research

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 502)

Pages:

87-90

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.502.87

Citation:

Cite this paper

Online since:

April 2012

Authors:

Chen Jie Guo, Chang Song Zhang

Keywords:

Dielectric Property, Low-Temperature Sintering, Microstructure

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Hilkat Erkalfa, Zulal Misirli, Tarik Baykara. Densification of Aulmina at 1250˚C with MnO2 and TiO2 Additives[J]. Ceramics International, 1995, 21: 345-348.

DOI: 10.1016/0272-8842(95)96207-6

Google Scholar

[2] Ramesh, Lee J, Sands T, et al. Oriented ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O beterostructures on.

DOI: 10.1080/10584589408017007

Google Scholar

[1] Pt/SiO2/Si substrate using a bismuth titanate template layer [J]. Appl Phys Lett, 1994, 64: 25112513.

Google Scholar

[3] Yu T, Chen Y F, Liu Z G, et al. Epitaxial Pb(Zr0. 53Ti0. 47)O /LiNiO3 heterostructures on single crystal substractes[J]. Appl Phys Lett, 1996, 69: 2092-(2094).

Google Scholar

[4] Zhu Peinan, Guo Jingkun. The relationship and microstructure of sintering reaction of the formation Li2O2-MgO2-CaO2-Al2O3-2SiO2 Microcrystalline glass[J]. Glass and Enamel, 1994, 22 (4): 1-5.

Google Scholar

[5] Zhang Lingying, Yaoxi. Dielectric physical. xian: Xi 'an jiaotong university press. (1991).

Google Scholar

[6] Chen Li-shah, Fu Shen-lI. Densification and dielectric properties of cordierite-lead borosilicate glasses[J]. Jpn JAppl Phys, 1992, 31(12A): 3917-3921.

DOI: 10.1143/jjap.31.3917

Google Scholar