Feasibility to Fabricate the 45° Slant with Anisotropic Silicon Etching in NaOH Solution

Abstract:

The experiments to study the feasibility to fabricate the 45 slant on p-type (100)-oriented silicon wafer were done. The various mask shapes, rectangular, cross, circle and boomerang, were patterned on the SiO2 mask by utilizing the conventional photolithography and dry etching process for investigating the anisotropic wet etch characteristic. The edge of masks were align in two crystal direction, 110 and 100 that is allowable to get a better understanding about the crystal orientation and the angle between planes in a crystal system. The very low etch rate,  50 nm/min, process regime was selected to fabricate the 45 slant with the concept is the lowest of an overall etch rate in the system to reach the level that is possible to detect the (110) plane. The etch recipe can be used for the next development work to built a housing of the laser light source for applying in a data storage technology.

• Periodical: Advanced Materials Research (Volumes 503-504)
• Pages: 615-619
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.503-504.615
• Online since: April 2012
• Authors: Alonggot Limcharoen, Chupong Pakpum, Pichet Limsuwan
• Keywords: 45° Slant, Anisotropic Wet Etching, NaOH Solution, Silicon (100)

References

[1] M.J. Madou: Fundamentals of Microfabrication: The Science of Miniaturization, 2nd ed. CRC PRESS (2002).

[2] I. Shubin, J.E. Cunningham, X. Zheng, J. Simons, D. Feng, H. Liang, C.C. Kung, M. Asghari and A.V. Krishnamoorthy: Optical Proximity Communication, Proc. Of SPIE Vol. 7219 (2009).

DOI: 10.1117/12.813415

[3] Y. Bäcklund and L. Rosengren: New shapes in (100) Si using KOH and EDP etches, J. Micromech. Microeng., vol. 2 (1992), pp.75-79.

DOI: 10.1088/0960-1317/2/2/002

[4] C. Strandman, L. Rosengren, Håkan G.A. Elderstig, and Y. Bäcklund: Fabrication of 45° Mirrors Together with Well-Defined V-Grooves Using Wet Anisotropic Etching of Silicon, Journal of microelectromechanical systems, Vol. 4, No. 4, (1995).

DOI: 10.1109/84.475548

[5] P. Pal, K. Sato, M.A. Gosalvez and M. Shikida: Novel Wet Anisotropic Etching Process for the Realization of New Shapes of Silicon MEMS Structures, IEEE 978-1-4244-1858-9/07/$25. 00 (2007), pp.499-504.

DOI: 10.1109/mhs.2007.4420906

[6] O. Powell and H. B. Harrison: Anisotropic etching of {100} and {110} planes in (100) silicon, J. Micromech. Microeng. 11 (2001), pp.217-220.

DOI: 10.1088/0960-1317/11/3/309

[7] T. Ohkubo, K. Tanaka, T. Hirota, K. Itao, K. Kato, S. Ichihara, M. Ohmi, H. Maeda, T. Niwa, Y. Mitsuoka and K. Nakajima: High speed sub-micron bit detection using tapered aperture mounted optical slider flying above a patterned metal medium, Microsystem Technologies 9 (2003).

DOI: 10.1007/s00542-002-0272-9

[8] M.H. Kryder, E.C. Gage, T.W. Mcdaniel, W.A. Challener, R.E. Rottmayer, G. Ju, Y.T. Hsia and M.F. Erden: Heat Assisted Magnetic Recording, Proceeding of the IEEE, Vol. 96 (2008) No. 11, pp.1810-1835.

DOI: 10.1109/jproc.2008.2004315

[9] Wet-Chemical Etching and Cleaning of Silicon : www. virginiasemi. com.