The Process Optimization of the First Ball Bonding for Copper Wire

Wei Zhang; Kang Wang; Chun Qing Wang

doi:10.4028/www.scientific.net/AMR.503-504.905

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 503-504The Process Optimization of the First Ball Bonding...

The Process Optimization of the First Ball Bonding for Copper Wire

Abstract:

Copper wire bonding has obtained prevalent owning to its economic advantage and superior electrical property. However, the replacement of gold wire with copper wire introduces hardness related issues as copper is much harder than gold. This article reports investigations of the process optimization of ball bonding for 1.8mil copper wire. The results showed that the suitable ranges of the three key parameters were: contact force was 100~120gf, bond time was 15~25ms, and bond power was 100~110dac. When the input energy was too low, it was hard to get effective bonding. However, excessive input energy would cause chip crater and serious extrusion of metallization layer.

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Periodical:

Advanced Materials Research (Volumes 503-504)

Pages:

905-908

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.503-504.905

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Online since:

April 2012

Authors:

Wei Zhang, Kang Wang, Chun Qing Wang

Keywords:

Ball Bonding, Copper Wire, Microelectronic Packaging, Process Optimization

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