Effects of Doping Si on the Preparation of Ternary Titanium Aluminum Carbide Powder by Pressureless Sintering

Abstract:

Ternary titanium aluminum carbide powder was prepared by pressureless sintering at different temperature using elemental powder mixture of Ti, Al, and active carbon whose molar ratios was 3Ti/1.1Al/1.8C and effects of doping Si were discussed from 3.0Ti/1.0Al/0.1Si/1.8C and 3.0Ti/0.9Al/0.2S/1.8C. X-ray diffractions (XRD) patterns were used to detect the phase composition and scanning electron microscope (SEM) patterns were observed to investigate the microstructure of samples respectively. Results showed that Ti₂AlC and Ti₃AlC₂ which had obvious layered structure were synthesized by pressureless sintering of 3Ti/1.1Al/1.8C at 1300°C-1500°C. However, the samples doping Si were made of Ti₂AlC, Ti₃AlC₂ and Ti₃SiC₂. When the amount of Si-doped increased and Al/Si decreased, the amount of Ti₃AlC₂ and Ti₃SiC₂ went up with Ti₂AlC going down. Interestingly, the character of layered structure became unconspicuous at same temperature. Moreover, the mechanism that doping Si was not helpful to form Ti₂AlC but Ti₃AlC₂ was explained.

• Periodical: Advanced Materials Research (Volume 510)
• Pages: 645-649
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.510.645
• Online since: April 2012
• Authors: Ping Wang
• Keywords: Doping Si, Pressureless Sintering, Ternary Titanium Aluminum Carbide Powder

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