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Oxygen Vacancy of RE0.5Sr0.5CoO3-δ Thin Films

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Abstract:

Thin films of RE0.5Sr0.5CoO3-δ (RE=La, Pr, Nd) nominal composition were grown on yttria-stabilized zirconia (YSZ) single crystal substrates by ion-beam sputtering deposition method. The X-ray diffraction spectra and X-ray photoelectron spectroscopy were measured for RE0.5Sr0.5CoO3-δ thin films with perovskite structure. The experimental results indicate that the average grain size of RE0.5Sr0.5CoO3-δ thin films ranges from 86 to 165 nm，and the film obtained by heat-treating at 750 °C is highly oriented . The RE0.5Sr0.5CoO3-δ thin films being mixed-valent systems contains Co3+ and Co4+ ions. There is oxygen vacancy at an interface region for RE0.5Sr0.5CoO3-δ thin films.

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Periodical:

Advanced Materials Research (Volumes 512-515)

Pages:

1668-1671

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.512-515.1668

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Online since:

May 2012

Authors:

Tie Zhu Ding, Cheng Jun Zhu, Yan Li Qin, Yan Lai Wang, Luo Meng Chao

Keywords:

Oxygen Vacancy, Solid Oxide Fuel Cell (SOFC), Thin Film

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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