The Effects of Selenization Temperature on the Properties of CIGS Thin Film Prepared by Cu-In-Ga-Se Precursors

Abstract:

CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors, as a new method, the effects of selenization temperature on the properties of CIGS thin films were studied. First, Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method. Then, precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films. The degree of reaction and morphology of films as a function of selenization temperature were analyzed. By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD), it was found that CIGS thin films selenized at 450°C exhibit chalcopyrite phase with preferred orientation along the (112) plane.

• Periodical: Advanced Materials Research (Volume 528)
• Pages: 214-218
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.528.214
• Online since: June 2012
• Authors: Han Bin Wang, Xi Jian Zhang, Qing Pu Wang, Xue Yan Zhang, Xiao Yu Liu
• Keywords: CIGS Thin Films, Cu-in-Ga-Se Precursors, Selenization Temperature

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