An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

Qian Luo; Jiang Feng Du; Xiang Wang; Ning Ning; Yang Liu; Qi Yu

doi:10.4028/www.scientific.net/AMR.529.33

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 529An Analytical Model for Field-Plate Optimization...

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

Abstract:

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

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Advanced Materials Research (Volume 529)

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33-36

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.529.33

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Online since:

June 2012

Authors:

Qian Luo, Jiang Feng Du, Xiang Wang, Ning Ning, Yang Liu, Qi Yu

Keywords:

Design, Field-Plate, HEMT

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