Effects of Oxygen Partial Pressure on the Sputtered Hafnium Oxide Thin Films for Resistive Random-Access Memory

Zhong Liang Xie; Yun Feng Lai

doi:10.4028/www.scientific.net/AMR.529.49

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 529Effects of Oxygen Partial Pressure on the...

Effects of Oxygen Partial Pressure on the Sputtered Hafnium Oxide Thin Films for Resistive Random-Access Memory

Abstract:

Hafnium oxide thin films were deposited on silicon substrates by RF reactive magnetron sputtering. The effects of oxygen partial pressure, tuned by the O2/Ar flow ratio, on the microstructure and electrical properties were characterized. All HfOx thin films exhibit monoclinic phases. As the increase of O2/Ar flow ratio from 0.08 to 0.33, the crystallinity is improved accompanied with the decreases of flat band voltage and leakage current density. However, when the O2/Ar flow ratio further increases to 0.5, the crystallinity becomes worse with the increase of flat band voltage and leakage current. The HfOx based resistive random-access memory (RRAM) has been fabricated and its storage properties were also investigated.

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Periodical:

Advanced Materials Research (Volume 529)

Pages:

49-52

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.529.49

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Online since:

June 2012

Authors:

Zhong Liang Xie, Yun Feng Lai

Keywords:

Hafnium Oxide, Resistance Change, RF Reactive Magnetron Sputtering, RRAM

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