Friction-Based In Situ Endpoint Detection of Copper CMP Process

Chi Xu; Dong Ming Guo; Ren Ke Kang; Zhu Ji Jin; Feng Wei Huo

doi:10.4028/www.scientific.net/AMR.53-54.125

Paper Titles

Numerical Study of the Effect of Tool Wear on Burr Formation in Blanking Process
p.95

Transformation of Cutting Burr/Fracture in High-Speed Machining Al Alloy
p.101

Polishing of Free-Standing CVD Diamond Films by the Combination of EDM and CMP
p.111

Analyzing on Nonuniformity of Material Removal in Silicon Wafer CMP Based on Abrasive Movement Trajectories
p.119

Friction-Based In Situ Endpoint Detection of Copper CMP Process
p.125

Research on Mechanism of Chemical Mechanical Polishing Process for Silicon Nitride Balls with CeO₂ Abrasive
p.131

Polishing Processing to Internal Surface of Non-Magnetic Pipe by Magnetic Abrasive Finishing
p.137

Surface Lapping by Semi-Bonded Abrasive Grinding Plate for Copper Substrates of Amorphous Ni-Pd-P Alloy Films
p.141

Study on the Evaluation Method of Lapping Uniformity for Ceramic Balls
p.147

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Friction-Based In Situ Endpoint Detection of Copper CMP Process

Abstract:

Chemical mechanical polishing (CMP) has been extensively used in the integrate circuit (IC) manufacturing industry as a widely accepted global planarization technology, accurate in situ endpoint detection of CMP process can reduce the product variance, significantly improve yield and throughput. A CMP in situ endpoint detection system, which measured the friction and downforce during CMP process using a specially designed three-axis strain gauge force sensor, was developed. The frictional transition from copper (Cu) to tantalum (Ta) barrier as well as Ta barrier to silicon dioxide (SiO2) dielectric was detected during CMP process. The experimental results showed that the change of friction could be detected when the polished material changed. The developed CMP in situ endpoint detection system is feasible for 300 mm and 450 mm copper CMP process.