Surface Lapping by Semi-Bonded Abrasive Grinding Plate for Copper Substrates of Amorphous Ni-Pd-P Alloy Films

Ju Long Yuan; Li Tao; Zhi Wei Wang; Qian Fa Deng; Feng Chen; Ping Zhao

doi:10.4028/www.scientific.net/AMR.53-54.141

Paper Titles

Analyzing on Nonuniformity of Material Removal in Silicon Wafer CMP Based on Abrasive Movement Trajectories
p.119

Friction-Based In Situ Endpoint Detection of Copper CMP Process
p.125

Research on Mechanism of Chemical Mechanical Polishing Process for Silicon Nitride Balls with CeO₂ Abrasive
p.131

Polishing Processing to Internal Surface of Non-Magnetic Pipe by Magnetic Abrasive Finishing
p.137

Surface Lapping by Semi-Bonded Abrasive Grinding Plate for Copper Substrates of Amorphous Ni-Pd-P Alloy Films
p.141

Study on the Evaluation Method of Lapping Uniformity for Ceramic Balls
p.147

Development of a New Plate Polishing Technique with an Instantaneous Tiny-Grinding Wheel Cluster Based on Magnetorheological Effect
p.155

Experimental Validation of the ‘Trap’ Effect of the Semibonded Abrasive Grinding Plate
p.161

Effect of Ice Counterparts on the Friction Behavior of Single Crystal Silicon Wafer
p.167

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 53-54Surface Lapping by Semi-Bonded Abrasive Grinding...

Surface Lapping by Semi-Bonded Abrasive Grinding Plate for Copper Substrates of Amorphous Ni-Pd-P Alloy Films

Abstract:

The amorphous Ni-Pd-P alloy films with superior property have good heat conductivity and wear performance. They are widely used in the protecting coating. Copper has been chosen to be a substrate material of the produce of amorphous Ni-Pd-P alloy films with its unique electrical properties. The precision lapping technology for the copper substrate using semi-bonded abrasive grinding plate is studied in this paper. The influences of the different lapping parameters on the surface roughness, material removal rate on copper substrate surface formation in the precision lapping process are both discussed. Experimental results indicate that the copper substrate can be efficiently processed by 800# SiC semi-bonded abrasive grinding plate of, and the initial roughness of a machined surface could be improved from 0.553μm Ra to 0.28μm in 10min, yielding a ideal rarely scratch surface.