Research on Mechanism of Chemical Mechanical Polishing Process for Silicon Nitride Balls with CeO2 Abrasive

Cong Rong Zhu; Bing Hai Lv; Ju Long Yuan

doi:10.4028/www.scientific.net/AMR.53-54.131

Paper Titles

Transformation of Cutting Burr/Fracture in High-Speed Machining Al Alloy
p.101

Polishing of Free-Standing CVD Diamond Films by the Combination of EDM and CMP
p.111

Analyzing on Nonuniformity of Material Removal in Silicon Wafer CMP Based on Abrasive Movement Trajectories
p.119

Friction-Based In Situ Endpoint Detection of Copper CMP Process
p.125

Research on Mechanism of Chemical Mechanical Polishing Process for Silicon Nitride Balls with CeO₂ Abrasive
p.131

Polishing Processing to Internal Surface of Non-Magnetic Pipe by Magnetic Abrasive Finishing
p.137

Surface Lapping by Semi-Bonded Abrasive Grinding Plate for Copper Substrates of Amorphous Ni-Pd-P Alloy Films
p.141

Study on the Evaluation Method of Lapping Uniformity for Ceramic Balls
p.147

Development of a New Plate Polishing Technique with an Instantaneous Tiny-Grinding Wheel Cluster Based on Magnetorheological Effect
p.155

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Research on Mechanism of Chemical Mechanical Polishing Process for Silicon Nitride Balls with CeO₂ Abrasive

Abstract:

Studies on chemical mechanical polishing (CMP) for silicon nitride (Si3N4) balls with CeO2 abrasive carried to investigate the mechanism of chemo-mechanical action between silicon nitride and CeO2. It is found that CeO2 is more effective to obtain smooth Si3N4 balls than other abrasives, and extremely smooth Si3N4 balls with surface Ra 4nm were obtained after polishing. XRD test is used to detect the reaction resultants on the ball surface, and the results show that SiO2 is the main resultant of the chemical reaction between Si3N4 and CeO2, and the test results confirm the correctness of thermodynamic analysis based on Gibb’s free energy of formation. It is also found that water play as a key factor in CMP.