Research on Mechanism of Chemical Mechanical Polishing Process for Silicon Nitride Balls with CeO2 Abrasive
Studies on chemical mechanical polishing (CMP) for silicon nitride (Si3N4) balls with CeO2 abrasive carried to investigate the mechanism of chemo-mechanical action between silicon nitride and CeO2. It is found that CeO2 is more effective to obtain smooth Si3N4 balls than other abrasives, and extremely smooth Si3N4 balls with surface Ra 4nm were obtained after polishing. XRD test is used to detect the reaction resultants on the ball surface, and the results show that SiO2 is the main resultant of the chemical reaction between Si3N4 and CeO2, and the test results confirm the correctness of thermodynamic analysis based on Gibb’s free energy of formation. It is also found that water play as a key factor in CMP.
Shengqiang Yang, Shichun Yang and Hang Gao
C. R. Zhu et al., "Research on Mechanism of Chemical Mechanical Polishing Process for Silicon Nitride Balls with CeO2 Abrasive", Advanced Materials Research, Vols. 53-54, pp. 131-136, 2008