GaAs-Based High Power Diode Laser

Article Preview

Abstract:

High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. The device structure and stack technology of edge-emitting diode laser were presented briefly as well as the development of electro-optical conversion efficiency ,lifetime , power .The technology of ten-thousand –watt level high power diode laser was introduced as a new generation of laser processing equipment. In order to output high power, we utilized polarization coupling technology to couple two 808nm and 880nm laser diode stack together, and designed the optical system to expand and focus the beam, through the experiment; we realize the overall efficiency more than 90%, power output 1000W.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 538-541)

Pages:

1852-1856

Citation:

Online since:

June 2012

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2012 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Norbert Lichtenstein, etal. Recent developments for BAR and BASE setting the trends [J] Proc. SPIE 2008 Vol. 6876, 68960C

Google Scholar

[2] Paul Leisher, etal. Mode control for high performance laser diode sources [J] Proc. SPIE 2008 Vol. 6952, 69520C.

Google Scholar

[3] Torsten Scheller, etal. High brightness fiber laser pump sources based on single emitters and multiple single emitters [J] Proc. SPIE 2008 Vol. 6876, 68960Z.

DOI: 10.1117/12.761554

Google Scholar

[4] R. Hülsewede, etal. High brilliance and high efficiency, optimized high power diode laser bars [J] Proc. SPIE 2008 Vol. 6876, 68960F.

DOI: 10.1117/12.763230

Google Scholar

[5] Harald König, etal. Brilliant high power laser bars for industrial applications [J] Proc. SPIE 2008 Vol. 6876, 689616.

Google Scholar

[6] Paul Crump, etal. 100-W+ Diode Laser Bars Show > 71% Power Conversion from 790-nm to 1000-nm and Have Clear Route to > 85% [J] Proc. SPIE 2007 Vol. 6456, 64560M.

DOI: 10.1117/12.704496

Google Scholar

[7] Matthew Peters, etal. High Power, High Efficiency Laser Diodes at JDSU [J] Proc. SPIE 2007 Vol. 6456, 64560G.

Google Scholar

[8] Hanxuan Li, etal. High-efficiency, high-power diode laser chips, bars, and stacks [J] Proc. SPIE 2008 Vol. 6876, 68760G.

Google Scholar

[9] H J Baker, J F Monjardin, P Kneip, D R Hall, 1.8kW diode laser system for fibre-delivery using brightness-enhanced diode stacks and a novel final beam-shaper [J] Proc. SPIE 2008 Vol. 6876, 68760W.

DOI: 10.1117/12.762786

Google Scholar

[10] Friedrich Bachmann, High Power Laser Sources for Industry and their Applications [J] Proc. SPIE 2008 Vol. 6735, 67350T.

Google Scholar

[11] www.visotekinc.com

Google Scholar