Research on the Electronic Tunneling in Asymmetric Dual-Quantum-Well

Abstract:

An Al_0.3Ga_0.7As/GaAs/Al_0.3Ga_0.7As/GaAs/Al_0.3Ga_0.7As asymmetric dual-quantum-well structure was designed. The barrier thickness between the dual quantum wells is 48Å, it is thick enough to inhibit the mutual cross-interference between the energy levels within the two quantum wells. This material system was grown on a GaAs substrate by solid source molecular beam epitaxy, and the device was fabricated with rat electrodes using inductively coupled plasma etching mesa process. The tunneling effect that electron transfer through the dual-quantum-well structure was observed in the device I-V feature, it was calculated and demonstrated by transmission matrix method and Ariy Function numerical transform.

• Periodical: Advanced Materials Research (Volumes 542-543)
• Pages: 953-958
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.542-543.953
• Online since: June 2012
• Authors: Xia Zheng Bu, Jian Wang, Ju Liang Shi, Hui Zhao
• Keywords: Asymmetric Dual-Quantum-Well, Electronic Wave Function, Quantum Tunneling Effect

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