Study of Silicon Substrate Microspheres Reactive Ion Etching Technique

Dong Sheng Peng; Zhi Gang Chen; Cong Cong Tan

doi:10.4028/www.scientific.net/AMR.542-543.945

Paper Titles

Design and Application of Time-Domain Transmission Moisture Content of Crude Oil Sensor
p.928

Detection Research on Weak Stress Wave in Rock-Soil Based on Quasi Distributed Optical Fiber Sensing Technology
p.933

Pedestrian Detection Based on Histograms of Oriented Gradients in ROI
p.937

Fault Detection System and Reliability Analysis for Chain-Type Tool Magazine
p.941

Study of Silicon Substrate Microspheres Reactive Ion Etching Technique
p.945

Design of Servo System Intelligent Control Chip Based on FPGA
p.949

Research on the Electronic Tunneling in Asymmetric Dual-Quantum-Well
p.953

Determination of DMMP Using a Polymer Coated QCM Sensor
p.959

Study on Track Control to the Multiple Degrees of Freedom Mechanical Arm of the Sampling Machine for Coal at Railway Carriage
p.963

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 542-543Study of Silicon Substrate Microspheres Reactive...

Study of Silicon Substrate Microspheres Reactive Ion Etching Technique

Abstract:

The paper studies the microspheres etching technique, the silicon pillar arrays are fabricated using polystyrene particles as etching mask by Reactive Ion Etching. Obtained the substrate can be Lateral epitaxial. The influence of different parameters in etch process are investigated on silicon pillar arrays in detail. A large-area Si pillar can be obtained on Si substrate by controlling the suitable etch parameters. The approach reported here offers a possibility to product large-area pillar.