Temperature Dependent Photoluminescence of ZnSe/Alq3 Hybrid Heterostructure

Wisanu Pecharapa; P. Potirak; W. Yindeesuk

doi:10.4028/www.scientific.net/AMR.55-57.493

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 55-57Temperature Dependent Photoluminescence of...

Temperature Dependent Photoluminescence of ZnSe/Alq₃ Hybrid Heterostructure

Abstract:

II-VI inorganic/organic heterostructures consisting of ZnSe and tris(8-hydroxyquinoline) aluminum (Alq3) were prepared by electron beam evaporator. Alq3 layer with 20 nm was grown between 200-nm ZnSe layers. Photoluminescence measurement was conducted at various temperatures in order to investigate the important temperature-dependent parameters of this structure. PL spectra revealed thermal population of exciton state and the change in PL quantum efficiency of the film.