Improving Sensitivity of p-n Junction Temperature Sensor by Carrier Lifetime Modification

Abstract:

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This paper presents the relation between the staring cobalt thickness with carrier generation lifetime, which effects to the sensitivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30nm have been used. The carrier generation lifetimes have been calculated from the reverse current-voltage (I-V) characteristics. The highest carrier generation lifetime has been obtained in the case of 12nm starting cobalt thickness. The highest sensitivity of p-n junction temperature sensor has also been observed from the case of 12nm starting cobalt thickness. The sensitivity has been calculated from the relation between leakage current versus temperature. The sensitivity of p-n junction temperature sensor can be improved by increasing carrier generation lifetime.

Info:

Periodical:

Advanced Materials Research (Volumes 55-57)

Main Theme:

Edited by:

Tawee Tunkasiri

Pages:

517-520

DOI:

10.4028/www.scientific.net/AMR.55-57.517

Citation:

A. Poyai et al., "Improving Sensitivity of p-n Junction Temperature Sensor by Carrier Lifetime Modification", Advanced Materials Research, Vols. 55-57, pp. 517-520, 2008

Online since:

August 2008

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Price:

$35.00

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