This paper presents the diamond nucleation using combustion activation chemical vapor deposition (CACVD) by 0.95 volumetric ratio of O2 /C2H2 under atmospheric pressure. The main point of our work is to develop the CACVD technique for synthesize the semiconductor materials, which is developed for electronic devices application. The surface nucleation of substrate was studied by using surface pretreatment. The results of surface nucleation on mirror-silicon, polished silicon by diamond powder, silicon-dioxide (SiO2), and polished SiO2 by diamond powder, are significantly different. It can be concluded that the silicon-dioxide mask technique is useful for nucleated diamond protection whereas the polished silicon by diamond powder is suitable for nucleated diamond generation. These techniques are applied for the pattern fabrication.