A microwave (MW) plasma reactor for the synthesis of polythiophene (PTh) thin films as well as in situ doping during polymerization process has been designed and assembled. Plasma polymerization parameters were studied. A good MW power was found to be in the range of 150-250W. PTh films were characterized by various spectrophotometric methods. IR analyses showed absorption frequencies of important functional groups. PTh films exhibited UV-Vis spectra indicative of increased conjugative systems as the MW power increased although at 300 and 380W partial fragmentation was evident. Surface analysis by SEM revealed a uniformly deposited film morphology. EDS results were also suggestive of partial fragmentation of the films at high MW powers. Preliminary conductive measurements revealed that the undoped films exhibit higher conductivity (3 to 9×10-5 s.cm-1) than PTh typically prepared from electrochemical methods.