Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method

Abstract:

Article Preview

The total leakage current in silicon p-n junction diodes compatible with 0.8 µm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density.

Info:

Periodical:

Advanced Materials Research (Volumes 55-57)

Main Theme:

Edited by:

Tawee Tunkasiri

Pages:

765-768

DOI:

10.4028/www.scientific.net/AMR.55-57.765

Citation:

W. Pengchan et al., "Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method ", Advanced Materials Research, Vols. 55-57, pp. 765-768, 2008

Online since:

August 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.