Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method
The total leakage current in silicon p-n junction diodes compatible with 0.8 µm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density.
W. Pengchan et al., "Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method ", Advanced Materials Research, Vols. 55-57, pp. 765-768, 2008