Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method

W. Pengchan; T. Phetchakul; Amporn Poyai

doi:10.4028/www.scientific.net/AMR.55-57.765

Paper Titles

Characterization and Thermal Properties of Sol-Gel Processed PMMA/SiO₂ Hybrid Materials
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Surface Treatment of Polystyrene Films with Inductively Coupled Plasma System
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Ring-Opening Polymerization of ε-Caprolactone Using Novel Tin(II) Alkoxide Initiators
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Investigation of the Strain Hardening and Bauschinger Effect of Low and High Strength Steel Application in Drawbead-Tester by Experiment and Numerical Simulation
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Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method
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Preparation and Properties Indium Tin-Oxide Thin Films by RF Sputtered for Photodetectors
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High Resolution X-Ray Diffraction and Raman Scattering Studies of Cubic-Phase InN Films Grown by MBE
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Effect of Palladium on Photocatalytic Activity of SnO₂ Nanoparticles
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Computational Study on Thermodynamic and Structural Properties of ZSM-5 Doped by Al/Fe and Al/P
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 55-57Extraction of Defect in Doping Silicon Wafer by...

Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method

Abstract:

The total leakage current in silicon p-n junction diodes compatible with 0.8 µm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density.