The Study of Contamination and Coarsening in Sintering Silicon Powder

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Abstract:

The goal of this study was to investigate the sintering mechanism of Si powder, with the particle size of Si, sintering temperature, and sintering environment as the variables. The use of a crucible, by controlling the vapor atmosphere at certain temperatures, coarsened the silicon powder. Experiment of data show that by avoiding the vapor pressure of crucible a sintering at 1380°C causes the silicon powder easily to sinter to high density, without the use of any doping addition. Therefore it is to our advantage to discover the microstructure phenomenon of silicon powder and reveal its nature. The crystalline structure of the heat-treated samples was studied with Scanning electron microscopy (SEM) to explain the resultant of contamination that causes the densification.

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Advanced Materials Research (Volumes 557-559)

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1197-1200

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July 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] Romanov, G.N., Liquid-phase sintering of powder bodies of the Al-Si system. Russian Journal of Non-Ferrous Metals, 2011. 52(1): pp.82-85.

DOI: 10.3103/s1067821211010214

Google Scholar

[2] Wagner, C., Passivity during the oxidation of silicon at elevated temperatures. Journal of Applied Physics, 1958. 29(9): pp.1295-1297.

DOI: 10.1063/1.1723429

Google Scholar

[3] Herring, C., Effect of change of scale on sintering phenomena. Journal of Applied Physics, 1950. 21(4): pp.301-303.

Google Scholar

[4] Shinozaki, S. and M.E. Milberg, ELECTRON MICROSCOPY STUDY OF THE EFFECT OF IRON IN REACTION-SINTERED SILICON NITRIDE. Journal of the American Ceramic Society, 1981. 64(7): pp.382-385.

DOI: 10.1111/j.1151-2916.1981.tb09874.x

Google Scholar

[5] Shaw, N.J. and A.H. Heuer, On particle coarsening during sintering of silicon. Acta Metallurgica, 1983. 31(1): pp.55-59.

DOI: 10.1016/0001-6160(83)90063-9

Google Scholar

[6] Robertson, W.M., THERMAL ETCHING AND GRAIN-BOUNDARY GROOVING OF SILICON CERAMICS. Journal of the American Ceramic Society, 1981. 64(1): pp.9-13.

DOI: 10.1111/j.1151-2916.1981.tb09550.x

Google Scholar

[7] Gulbransen, E.A. and S.A. Jansson, The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbide. Oxidation of Metals, 1972. 4(3): pp.181-201.

DOI: 10.1007/bf00613092

Google Scholar

[8] Román, R., et al., Solar sintering of alumina ceramics: Microstructural development. Solar Energy, 2008. 82(10): pp.893-902.

DOI: 10.1016/j.solener.2008.04.002

Google Scholar

[9] Kraft, T. and H. Riedel, Numerical simulation of solid state sintering; model and application. Journal of the European Ceramic Society, 2004. 24(2): pp.345-361.

DOI: 10.1016/s0955-2219(03)00222-x

Google Scholar

[10] Subbanna, M., P.C. Kapur, and Pradip, Computer-aided control of the evolution of microstructure during sintering. Materials Chemistry and Physics, 2001. 67(1-3): pp.17-24.

DOI: 10.1016/s0254-0584(00)00414-4

Google Scholar