Electrochemically Deposited Thermoelectric Bismuth-Telluride Films

Yan Ling Liu; Xiao Xia Yan; Zhi Gang Zeng; Zhi Yu Hu

doi:10.4028/www.scientific.net/AMR.557-559.1811

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 557-559Electrochemically Deposited Thermoelectric...

Electrochemically Deposited Thermoelectric Bismuth-Telluride Films

Abstract:

Thermoelectric bismuth-telluride films were successfully prepared from nitric acid aqueous solution with ethylene glycol on Ti-sputtered silicon substrates by electrochemical deposition techniques. Cyclic voltammograms (CV), X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) were used to investigate nucleation process, the crystal structures, morphologies and compositions of the bismuth-telluride films. The results show that the materials are Bi-rich, exhibiting preferred (110) orientation with rhombohedral structure. The crystallite size of films was calculated based on Scherrer’s equation and found to be 18-20 nm.

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Periodical:

Advanced Materials Research (Volumes 557-559)

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1811-1814

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.557-559.1811

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Online since:

July 2012

Authors:

Yan Ling Liu, Xiao Xia Yan, Zhi Gang Zeng, Zhi Yu Hu

Keywords:

Bismuth-Telluride Films, Electrochemical Deposition, Ethylene Glycol, Thermoelectric

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