The Interface Properties of La2O3/GaAs System by Surface Passivation

Ting Ting Jia; Xing Hong Cheng; Duo Cao; Da Wei Xu; You Wei Zhang; Zhong Jian Wang; Chao Xia; Yue Hui Yu

doi:10.4028/www.scientific.net/AMR.557-559.1815

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 557-559The Interface Properties of La2O3/GaAs System by...

The Interface Properties of La₂O₃/GaAs System by Surface Passivation

Abstract:

In this work, La₂O₃ gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH₃ plasma in situ treatment. The interfacial reaction mechanisms of La₂O₃ on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

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Advanced Materials Research (Volumes 557-559)

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1815-1818

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.557-559.1815

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July 2012

Authors:

Ting Ting Jia, Xing Hong Cheng, Duo Cao, Da Wei Xu, You Wei Zhang, Zhong Jian Wang, Chao Xia, Yue Hui Yu

Keywords:

Gallium Arsenide, High-k Gate Dielectric, Passivation, Plasma Enhanced Atomic Layer Deposition, X-Ray Photoelectron Spectra

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