Preparation and Electrical Properties of Bi0.9Nd0.1Fe0.925Mn0.075O3 Thin Films

Ning Yan; Sheng Hong Yang; Yue Li Zhang

doi:10.4028/www.scientific.net/AMR.557-559.1933

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 557-559Preparation and Electrical Properties of...

Preparation and Electrical Properties of Bi_0.9Nd_0.1Fe_0.925Mn_0.075O₃ Thin Films

Abstract:

Pure BiFeO₃ (BFO) and Bi_0.9Nd_0.1Fe_0.925Mn_0.075O₃ (BNFM) thin films were deposited on Pt(111)/Ti/SiO₂/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd–Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74μC/cm² has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.

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Advanced Materials Research (Volumes 557-559)

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1933-1936

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https://doi.org/10.4028/www.scientific.net/AMR.557-559.1933

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July 2012

Authors:

Ning Yan, Sheng Hong Yang*, Yue Li Zhang

Keywords:

BFO Thin Films, Ferroelectric, Leakage Current, Sol-Gel Method

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