Adjust the Content of Nickel in NiZnO Films by Vacuum Anneal

Abstract:

NiZnO films were grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Then the films were annealed in vacuum at different temperatures for 1h. The UV emission peak was blue shifted in the photoluminescence (PL) spectra and a dramatic shift of (002) diffraction peak to higher angle was observed in X-ray diffraction (XRD) pattern with the increasing anneal temperature. It showed the band gap and the lattice parameter of NiZnO had been affected by anneal in vacuum. From the X-ray photoelectron spectroscopy (XPS) of the NiZnO film, we can find that the anneal temperature had an important effect on the content of each element in NiZnO quantificationally. In addition, the value of x in NiZnO varied slightly with the anneal temperature increasing. The above phenomena indicated that anneal in vacuum could slightly adjust the percentage of Ni indirectly in NiZnO film and offer a good idea in NiZnO devices facture.

• Periodical: Advanced Materials Research (Volumes 562-564)
• Pages: 11-14
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.562-564.11
• Online since: August 2012
• Authors: Xin Dong, Jin Wang, Hui Wang, Zhi Feng Shi, Bao Lin Zhang
• Keywords: Anneal, MOCVD, NiZnO

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