Finite Element Analysis of Copper Wire Bonding in Integrated Circuit Devices

Nauman Dastgir; Pooria Pasbakhsh; Ning Qun Guo; Norhazlina Ismail; Kheng-Lim Goh

doi:10.4028/www.scientific.net/AMR.566.293

Paper Titles

Dynamic Drawing Treatment of the Three-Bridge High-Pressure Waterjet Cutting Machine
p.271

Design of the Tooth Profile of a Full Conjugate Helical Gear Pump
p.276

Design and Modeling of Electric Assistance Power Steering System
p.281

Microstructure and Rolling Contact Fatigue Strength of Induction Heated AISI 52100 Bearings
p.288

Finite Element Analysis of Copper Wire Bonding in Integrated Circuit Devices
p.293

A Creative Design for Assistive Bicycles
p.300

CAD Course in Engineering Education
p.304

Comparison between the RCF Performance of TiN- and TiO₂-Laser Coated Ti64 Bearings
p.308

The Restrain Theory of Gyro Constant Error with Rotation Modulation
p.313

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 566Finite Element Analysis of Copper Wire Bonding in...

Finite Element Analysis of Copper Wire Bonding in Integrated Circuit Devices

Abstract:

Axisymmetric finite element models of copper wire-bond-pad structure for an integrated circuit devicewere developed to investigate theeffects of bonding force, initial bonding temperature, Aluminum metallization thickness, bond pad thickness and free air ball (FAB) diameter on induced stresses in the wire-bond structure. The results show that an increase in bonding force greatly increased the induced stresses in the copper FAB and bond pad (aluminum and silicon). However, a change in bonding temperature while keeping the bonding force constant does not result in an appreciable change in the stress. Similarly an increase in aluminium metallization thickness does not yield appreciable variation in the stress and strain in the bond pad. Over the range of FAB diameters studied it is found that bigger FAB yields smaller stress in the overall structure

You might also be interested in these eBooks

Machine Design and Manufacturing Engineering

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 566)

Pages:

293-299

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.566.293

Citation:

Cite this paper

Online since:

September 2012

Authors:

Nauman Dastgir, Pooria Pasbakhsh, Ning Qun Guo, Norhazlina Ismail, Kheng-Lim Goh

Keywords:

Aluminum Metallization Thickness, Bond Pad Thickness, Bonding Force, Free Air Ball Diameter, Initial Bonding Temperature

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] C.J. Hang, C.Q. Wang, M. Mayer, Y.H. Tian, Y. Zhou, H.H. Wang, Microelectronics Reliability, Vol. 48 (2008), p.424.

Google Scholar

[2] G.G. Harman, Wire bonding in microelectronics: materials, processes, reliability and yield, McGraw-Hill (2010).

Google Scholar

[3] H. Xu, C. Liu, V.V. Silberschmidt, S.S. Pramana, T.J. White, Z. Chen, Scripta Materialia, Vol. 61 (2009), p.165.

Google Scholar

[4] S. Murali, N. Srikanth, Y.M. Wong, C.J. Vath, Journal of Materials Science, Vol. 42 (2006), p.615.

Google Scholar

[5] Y. Liu, S. Irving, T. Luk, IEEE Transactions on Electronics Packaging Manufacturing, Vol. 31 (2008), p.61.

Google Scholar

[6] D. Degryse, B. Vandevelde, E. Beyne, IEEE Transactions on Components and Packaging Technologies, Vol. 27 (2004), p.643.

Google Scholar

[7] A.G.K. Viswanath, X. Zhang, V.P. Ganesh, L. Chun, IEEE Transactions on Advanced Packaging, Vol. 30 (2007), p.448.

Google Scholar

[8] S.L. Khoury, D.J. Burkhand, D.P. Galloway, T.A. Scharr, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. 13 (1990), p.673.

Google Scholar

[9] R.V. Mises, Bulletin of the American Mathematical Society, Vol. 51 (1945), p.555.

Google Scholar