A New Anodic Bonding Method of Triple-Stack Structure

Ye Yuan; Hong Juan Cui; Xing Hua Wang; Ding Bang Xiao; Xue Zhong Wu

doi:10.4028/www.scientific.net/AMR.569.153

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 569A New Anodic Bonding Method of Triple-Stack...

A New Anodic Bonding Method of Triple-Stack Structure

Abstract:

Based on the triple-stack structure of "sandwich" of three-axis micro-accelerometer, a anodic bonding technology about three-layer of glass-silicon-glass is brought out. As the advantage of the triple-stack structure is introduced, the process of traditional anodic bonding is expounded. Since the bonding in the first time has led the layers of glass and silicon felt together, the strength of the first bonding will be destroyed if the electrode loads on the bonding glass-silicon surface directly in the second time. For this problem, the methed using dielectric material to pass bonding voltage is proposed. The results of the experiment show that the proposed new three-stack bonding method is simple and feasible.

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Periodical:

Advanced Materials Research (Volume 569)

Pages:

153-158

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.569.153

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Online since:

September 2012

Authors:

Ye Yuan, Hong Juan Cui, Xing Hua Wang, Ding Bang Xiao, Xue Zhong Wu

Keywords:

Anodic Bonding, Dielectric Material, Medium, Triple-Stack Bonding

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