Effect of Bump Shape on Current Density and Temperature Distributions in Solder Bump Joints under Electromigration

Yi Li; Xiu Chen Zhao; Ying Liu; Hong Li

doi:10.4028/www.scientific.net/AMR.569.82

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 569Effect of Bump Shape on Current Density and...

Effect of Bump Shape on Current Density and Temperature Distributions in Solder Bump Joints under Electromigration

Abstract:

Three dimensional thermo-electrical finite element analysis was employed to simulate the current density and temperature distributions for solder bump joints with different bump shapes. Mean-time-to-failure (MTTF) of electromigration was discussed. It was found that as the bump volume increased from hourglass bump to barrel bump, the maximum current density increased but the maximum temperature decreased. Hourglass bump with waist radius of 240 μm has the longest MTTF.

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Advanced Materials Research (Volume 569)

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82-87

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https://doi.org/10.4028/www.scientific.net/AMR.569.82

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September 2012

Authors:

Yi Li, Xiu Chen Zhao, Ying Liu, Hong Li

Keywords:

Bump Shape, Electromigration, MTTF

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References

[1] K.N. Tu, Journal of Applied Physics, 94 (2003) 5451.

Google Scholar

[2] S. Kang, P. Gruber and D.Y. Shih, JOM Journal of the Minerals, Metals and Materials Society, 60 (2008) 66.

Google Scholar

[3] C. Yu, H. Lu, R.Z. Fan and S.M. Li, Science and Technology of Welding and Joining, 12 (2007) 423.

Google Scholar

[4] Y.S. Lai and C.L. Kao, Microelectronics Reliability, 46 (2006) 915.

Google Scholar

[5] S.W. Liang, S.H. Chiu and C. Chen, Applied Physics Letters, 90 (2007) 082103.

Google Scholar

[6] J.W. Nah, J.O. Suh and K.N. Tu, Journal of Applied Physics, 98 (2005) 013715.

Google Scholar

[7] T.Y. Lee, K.N. Tu, S.M. Kuo and D.R. Frear, Journal of Applied Physics, 89 (2001) 3189.

Google Scholar

[8] T. Miyazaki and T. Omata, Microelectronics Reliability, 46 (2006) 1898.

Google Scholar

[9] J.W. Nah, K.W. Paik, J.O. Suh and K.N. Tu, Journal of Applied Physics, 94 (2003) 7560.

Google Scholar

[10] J.S. Zhang, Y.C. Chan, Y.P. Wu, H.J. Xi and F.S. Wu, Journal of Alloys and Compounds, 458 (2008) 492.

Google Scholar

[11] M. Ahmad, K. Hubbard and M. Hu, Journal of Electronic Packaging, Transactions of the ASME, 127 (2005) 290.

Google Scholar

[12] X.S. Liu, S.Y. Xu, G.Q. Lu and D.A. Dillard, Microelectronics Reliability, 41 (2001) 1979.

Google Scholar

[13] S.M. Heinrich, M. Schaefer, S.A. Schroeder and P.S. Lee, Journal of Electronic Packaging, Transactions of the ASME, 118 (1996) 114.

Google Scholar

[14] D.J. Zhou, Z.C. Chen, K.L. Pan and Z.H. Wu, Journal of Zhejiang University, 34 (2000) 637. (in Chinese)

Google Scholar

[15] J.R. Black, IEEE Transactions on Electron Devices, 16 (1969) 338.

Google Scholar

[16] K. Zeng and K.N. Tu, Materials Science & Engineering R-Reports, 38 (2002) 55.

Google Scholar

[17] W.C. Kuan, S.W. Liang and C. Chen, Microelectronics Reliability, 49 (2009) 544.

Google Scholar