MOCVD Growth and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

Peng Tian; Chong Qing Huang; Wen Hua Luo; Jing Liu

doi:10.4028/www.scientific.net/AMR.571.265

Paper Titles

Research on Satellite Platform Vibration Compensation Technology for Space Optical Communication
p.248

Optimization of Trapezoid Coupling Grating for Long-Wave Quantum Well Infrared Photodetector
p.252

Optimization of Xenon Gas Discharge Flat Panel Lamps
p.256

A 5-Port Photonic Lantern for Light Beam Combining
p.261

MOCVD Growth and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots
p.265

The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots
p.269

Research of a Small-Scale Building Integrated Photovoltaic Micro-Grid System
p.273

Investigation on Dispersion Property of a Novel Photonic Crystal Fiber with Square Array Air Holes
p.278

Fisher Information and Quantum Squeezing Properties of Gaussian Pure States
p.283

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 571MOCVD Growth and Optical Properties of...

MOCVD Growth and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

Abstract:

InAs/GaAs quantum dots structures are grown by meta-organic chemical vapor deposition. The effects of growth temperatures on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. An areal density of 9.3×109cm2 and a strongly enhanced photoluminescence intensity are obtained at the temperature of 505°C, furthermore, the low and high growth temperature tend to form coalescent islands and decrease the intensity of photoluminescence spectra.

You might also be interested in these eBooks

Opto-Electronics Engineering and Materials Research

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 571)

Pages:

265-268

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.571.265

Citation:

Cite this paper

Online since:

September 2012

Authors:

Peng Tian, Chong Qing Huang, Wen Hua Luo, Jing Liu

Keywords:

Growth Temperature, MOCVD, Optical Property, Quantum Dot (QD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. D. Germann, A. Strittmatter, T. Kettler, K. Posilovic, U. W. Pohl, and D. Bimberg, J. Cryst. Growth 298, 591 (2007).

DOI: 10.1016/j.jcrysgro.2006.10.081

Google Scholar

[2] E. Rasanen, A. Castro, J. Werschnik, A. Rubio, and E. K. U. Gross, Phys. Rev. B 77 (8) (2008).

Google Scholar

[3] Katsuaki Tanabe, Katsuyuki Watanabe, and Yasuhiko Arakawa, Appl Phys Lett 100 (19), 192102 (2012).

Google Scholar

[4] D. P. Kumah, J. H. Wu, N. S. Husseini, V. D. Dasika, R. S. Goldman, Y. Yacoby, and R. Clarke, Appl Phys Lett 98 (2), 021903 (2011).

DOI: 10.1063/1.3535984

Google Scholar

[5] L. Jauffred, A. C. Richardson, and L. B. Oddershede, Nano Lett 8 (10), 3376 (2008).

Google Scholar

[6] Ian Sandall, Jo Shien Ng, John P. R. David, Chee Hing Tan, Ting Wang, and Huiyun Liu, Opt Express 20 (10), 10446 (2012).

Google Scholar

[7] L. H. Li, M. Rossetti, G. Patriarche, and A. Fiore, J Cryst Growth 301, 959 (2007).

Google Scholar

[8] Shiguo Li, Qian Gong, Xinzhong Wang, Li Yue, Oingbo Liu, and Hailong Wang, Chinese Optics Letters 10 (4) (2012).

Google Scholar

[9] S. Mokkapati K. Sears, H. H. Tan, and C. Jagadish, in Self-Assembled Quantum Dots (2008).

Google Scholar

[10] Z. M. Wang. Self-assembled quantum dots. New York: Springer, 2008, 359-405.

Google Scholar

[11] N. Kirstaedter, NN Ledentsov, M. Grundmann, D. Bimberg, VM Ustinov, SS Ruvimov, MV Maximov, P.S. Kop'ev, Z.I. Alferov, and U. Richter, Electron Lett 30 (17), 1416 (1994).

DOI: 10.1049/el:19940939

Google Scholar

[12] T. Wang, A. Lee, F. Tutu, A. Seeds, H. Liu, Q. Jiang, K. Groom, and R. Hogg, Appl Phys Lett 100 (5), 052113 (2012).

Google Scholar