The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

Abstract:

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.

• Periodical: Advanced Materials Research (Volume 571)
• Pages: 269-272
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.571.269
• Online since: September 2012
• Authors: Peng Tian, Chong Qing Huang, Wen Hua Luo, Jing Liu
• Keywords: Cap Layer, MOCVD, Optical Property, Quantum Dot (QD)

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