Characteristic of Point Defect around the Photonic Crystal Bend

Ruei Chang Lu; Chun Min Wang; Keh Yi Lee

doi:10.4028/www.scientific.net/AMR.571.300

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 571Characteristic of Point Defect around the Photonic...

Characteristic of Point Defect around the Photonic Crystal Bend

Abstract:

In this paper, we analyzed the transmission characteristics of the point defects around the 90-degree waveguide bend in photonic crystal. Without suspicion, the nearest defects greatly affect the transmission characteristics, but the farther third layer has more influence than the nearer second layer. Moreover, the defects in line with the propagating path should be avoided. Lastly, the defects in outer side of the corner bend hardly affect the transmission characteristic, but the defects in inner side do the contrary. These results should be helpful in fabricating 2D photonic crystal with 90° bent structure.