Influence of Post Annealing Temperature on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

Abstract:

Article Preview

Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition annealing of the ZnO thin film were performed at 350, 400, 450 and 500°C. Post annealing temperature was found to improve the structural and electrical characteristics of the deposited films. The structural properties of the films were carried out by the surface profiler, X-Ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) while the electrical properties were measured using current voltage (I-V) probe measurement system. All samples exhibit the (002) peak and the sample annealed at 500°C gives the highest crystalline quality, highest Rms roughness (1.819 nm) and highest electrical conductivity (3.28 x 10-3 Sm-1).

Info:

Periodical:

Edited by:

Mustafizur Rahman, Erry Yulian Triblas Adesta, Mohammad Yeakub Ali, A.N. Mustafizul Karim, Md. Abdul Maleque, Hazleen Anuar, Tasnim Firdaus Mohamed Ariff, NMohammad Iqbal, Noorasikin Samat and Noor Azlina Hassan

Pages:

602-606

Citation:

S. Ahmad et al., "Influence of Post Annealing Temperature on the Properties of ZnO Films Prepared by RF Magnetron Sputtering", Advanced Materials Research, Vol. 576, pp. 602-606, 2012

Online since:

October 2012

Export:

Price:

$41.00

[1] Z. Bai, C. Xie, S. Zhang,L. Zhang, Q. Zhang, W. Xu, and J. Xu, Microstructure and gas sensing properties of the ZnO thick film treated by hydrothermal method, Sensors and Actuators B: Chemical, vol. 151, pp.107-113, (2010).

DOI: https://doi.org/10.1016/j.snb.2010.09.039

[2] J. Chen, J. Li, J. Li, G. Xiao, and X. Yang, Large-scale syntheses of uniform ZnO nanorods and ethanol gas sensors application, Journal of Alloys and Compounds, vol. 509, pp.740-743, (2011).

DOI: https://doi.org/10.1016/j.jallcom.2010.09.043

[3] D.R. Sahu, Properties of doped ZnO thin films grown by simultaneous dc and RF magnetron sputtering, Materials Science and Engineering: B, vol. 171, pp.99-103, (2010).

DOI: https://doi.org/10.1016/j.mseb.2010.03.080

[4] J.N. Zeng, J.K. Low, Z.M. Ren,T. Liew, and Y.F. Lu, Effect of deposition conditions on optical and electrical properties of ZnO films prepared by pulsed laser deposition, Applied Surface Science, vol. 197–198, pp.362-367, (2002).

DOI: https://doi.org/10.1016/s0169-4332(02)00425-7

[5] A.J.C. Fiddes, K. Durose, A.W. Brinkman, J. Woods, P.D. Coates, and A.J. Banister, Preparation of ZnO films by spray pyrolysis, Journal of Crystal Growth, vol. 159, pp.210-213, (1996).

DOI: https://doi.org/10.1016/0022-0248(95)00707-5

[6] M.N. Kamalasanan and S. Chandra, Sol-gel synthesis of ZnO thin films, Thin Solid Films, vol. 288, pp.112-115, (1996).

DOI: https://doi.org/10.1016/s0040-6090(96)08864-5

[7] K.B. Sundaram and A. Khan, Characterization and optimization of zinc oxide films by rf magnetron sputtering, Thin Solid Films, vol. 295, pp.87-91, (1997).

DOI: https://doi.org/10.1016/s0040-6090(96)09274-7

[8] C.W. Hsu, T.C. Cheng C.H. Yang, Y.L. Shen, J.S. Wu, and S.Y. Wu, Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering, Journal of Alloys and Compounds, vol. 509, pp.1774-1776, (2011).

DOI: https://doi.org/10.1016/j.jallcom.2010.10.037

[9] M. Selmi, F. Chaabouni, M. Abaab, and B. Rezig, Studies on the properties of sputter-deposited Al-doped ZnO films, Superlattices and Microstructures, vol. 44, pp.268-275, (2008).

DOI: https://doi.org/10.1016/j.spmi.2008.06.005

[10] M.D.J. Ooi, A.A. Aziz, and M. J. Abdullah, Recent development in the growth of ZnO nanoparticles thin film by magnetron sputtering, in Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on, 2008, pp.514-518.

DOI: https://doi.org/10.1109/smelec.2008.4770377

[11] D. Song, Effects of rf power on surface-morphological, structural and electrical properties of aluminium-doped zinc oxide films by magnetron sputtering, Applied Surface Science, vol. 254, pp.4171-4178, (2008).

DOI: https://doi.org/10.1016/j.apsusc.2007.12.061

[12] Z.B. Fang, Z.J. Yan, Y.S. Tan X.Q. Liu, and Y.Y. Wang, Influence of post-annealing treatment on the structure properties of ZnO films, Applied Surface Science, vol. 241, pp.303-308, (2005).

DOI: https://doi.org/10.1016/j.apsusc.2004.07.056

[13] H.B. Sun, Z.C. Sun, and C.S. Xue, The Influence of Annealing Temperature on ZnO Thin Films by Oxidating Zinc Films Deposited with Magnetron Sputtering, Advanced Materials Research, vol. 463, pp.624-628, (2012).

DOI: https://doi.org/10.4028/www.scientific.net/amr.463-464.624

[14] C. Yang, Z. Zeng, Z. Chen, J. Liu, and S. Zhang, Characterization of ZnO thin films deposited on diamond-like carbon coated onto Si and SiO2/Si substrate, Journal of Crystal Growth, vol. 293, pp.299-304, (2006).

DOI: https://doi.org/10.1016/j.jcrysgro.2006.04.101

[15] E.S. Shim, H.S. Kang, S.S. Pang, J.S. Kang, I. Yun, and S.Y. Lee, Annealing effect on the structural and optical properties of ZnO thin film on InP, Materials Science and Engineering: B, vol. 102, pp.366-369, (2003).

DOI: https://doi.org/10.1016/s0921-5107(02)00622-0

[16] S.Y. Chu, W. Water, and J.T. Liaw, Influence of postdeposition annealing on the properties of ZnO films prepared by RF magnetron sputtering, Journal of the European Ceramic Society, vol. 23, pp.1593-1598, (2003).

DOI: https://doi.org/10.1016/s0955-2219(02)00404-1

[17] J.W. Shin, Y.S. No, J.Y. Lee, J.Y. Kim W.K. Choi, and T.W. Kim, Effects of different annealing atmospheres on the surface and microstructural properties of ZnO thin films grown on p-Si substrates, Applied Surface Science, vol. 257, pp.7516-7520, (2011).

DOI: https://doi.org/10.1016/j.apsusc.2011.03.071

[18] G.P. Daniel, V.B. Justinvictor, P.B. Nair,K. Joy, P. Koshy, and P.V. Thomas, Effect of annealing temperature on the structural and optical properties of ZnO thin films prepared by RF magnetron sputtering, Physica B: Condensed Matter, vol. 405, pp.1782-1786, (2010).

DOI: https://doi.org/10.1016/j.physb.2010.01.039

[19] F.V. Farmakis, T. Speliotis, K.P. Alexandrou, C. Tsamis, M. Kompitsas, I. Fasaki, P. Jedrasik, G. Petersson, and B. Nilsson, Field-effect transistors with thin ZnO as active layer for gas sensor applications, Microelectronic Engineering, vol. 85, pp.1035-1038, (2008).

DOI: https://doi.org/10.1016/j.mee.2008.01.040