Parameters Analysis of Line Segment Fabrication on Near-Field Photolithography

Abstract:

This paper proposes the integral formula of exposure energy density during the movement of work piece to investigate the exposure energy distribution on the photoresist surface. The photoresist was divided into finite nodes to combine the integral formulas of exposure energy density to calculate the relative concentration variation of the photoactive compound (PAC) at each finite node of photoresist interior layer. This paper further combines with Mack’s development model and calculates the average full-width at half maximum (FWHM) of near field photolithography. This study conducted sensitivity analysis to determine how adjusting groups of control parameters influences FWHM and working depth (Hmax). Group A, in which the probe aperture was the adjusted parameter, had the most influence, followed by Group B, in which exposure energy/μm was the adjusted parameter, and Group C, in which development time was the adjusted parameter.

• Periodical: Advanced Materials Research (Volume 579)
• Pages: 330-337
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.579.330
• Online since: October 2012
• Authors: Ching Been Yang, Hsiu Lu Chiang, Jaw Ren Lin
• Keywords: Full Width Half Maximum (FWHM), Near Field Photolithography, Power Density, Sensitivity Analysis

References

[1] E. Betzig, A. Harootunian, A. Lewis, M. Isaacson, Near-field diffraction by a slit: implication for super resolution microscopy, Applied Optics, 25 (1986) 1890-(1900).

DOI: 10.1364/ao.25.001890

[2] E. Betzig, M. Isaacson, A. Lewis, Collection mode near-field scanning optical microscopy, Applied Physics Letters, 51 (1987) 2088-(2090).

DOI: 10.1063/1.98956

[3] Balanis, C.A., Advanced engineering electromagnetic, John Wiley & Sons, Inc., (1989).

[4] Z.C. Lin, C.B. Yang, The near-field power density distribution characteristics for different type optical fiber probes, International Journal of Advanced Manufacturing Technology, 26 (2005) 1289-1297.

DOI: 10.1007/s00170-004-2107-6

[5] A. Naber, H. Kock, H. Fuchs, High-resolution lithography with near-field optical microscopy, Scanning, 18 (1996) 567-571.

DOI: 10.1002/sca.4950180806

[6] F.H. Dill, W.P. Hornberger, P.S. Hauge, J.M. Shaw, Characterization of positive photoresist, IEEE Transactions on Electron Devices, 22 (1975) 445-452.

DOI: 10.1109/t-ed.1975.18159

[7] S.V. Babu, E. Barouch, Exact solution of Dill's model equation for positive photoresist kinetics, IEEE Electron Devices Letters, EDL-7 (1986) 252-253.

DOI: 10.1109/edl.1986.26362

[8] C.A. Mack, Development of positive photoresists, The Journal of The Electrochemical Society, 134 (1987) 148-152.

[9] Z.C. Lin, C.B. Yang, Analysis of point-fabrication model for nanometer-scale near field photolithography with experimental study, Scanning, 28 (2006) 32-41.

DOI: 10.1002/sca.4950280106

[10] Z.C. Lin, C.B. Yang, Line segment fabrication model analysis of near field photolithography, Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture, 223 (2009) 145-154.

DOI: 10.1243/09544054jem1210

[11] Z.C. Lin, C.B. Yang, Combining the Taguchi method with an artificial neural network to construct a prediction model of near field photolithography experiments, Proceedings of the Institution of Mechanical Engineers, Part C, Journal of Mechanical Engineering Science, 224 (2010).

DOI: 10.1243/09544062jmes2055