Research and Characterization of an Absorber Layer Material — Cu(In,Ga)Se2 Sputtered on Polyimide Substrate in Material Engineering

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Cu(In,Ga)Se2 is a very important type of absorber layer material for high efficiency solar cells in material engineering. Cu(In,Ga)Se2 thin films were prepared on polyimide (PI) substrates coated with Mo by RF magnetron sputtering in one-stage at temperature below 450 °C. Samples with high level crystallization were deposited on polyimide coated with Mo by optimizing process parameters. Lower electric resistivity, better quality of CIGS absorber layer was fabricated in lower temperature by sputtering.

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Periodical:

Edited by:

B. Xu and H.Y. Li

Pages:

370-373

Citation:

Y. P. Zhao et al., "Research and Characterization of an Absorber Layer Material — Cu(In,Ga)Se2 Sputtered on Polyimide Substrate in Material Engineering", Advanced Materials Research, Vol. 583, pp. 370-373, 2012

Online since:

October 2012

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$38.00

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