Influence of Sputtering Power on the Structure and Photoelectric Property of Ga Doped ZnO Films

Abstract:

Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering. The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis-NIR spectrometer. The results show that GZO thin films exhibit high c-axis-orientation, and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the film’s visible-light transmittance, but for all of the GZO thin films the average transmittance of the visible-light is above 80%. The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W. The lowest resistivity of 6.559×10-4Ω•cm can be obtained in the condition of the sputtering power is 100W, and the lowest square resistance is 7.9Ω/□.

• Periodical: Advanced Materials Research (Volumes 591-593)
• Pages: 922-926
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.591-593.922
• Online since: November 2012
• Authors: Lei Wu, Qing Nan Zhao, Gang Wu, Deng Kui Miao
• Keywords: DC Magnetron Sputtering, GZO Film, Optoelectronic Property, Sputtering Power

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