Poly-NiO/Nb:SrTiO3 Based Resistive Switching Device for Nonvolatile Random Access Memory

Cheng Hu; Yong Dan Zhu

doi:10.4028/www.scientific.net/AMR.605-607.1944

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 605-607Poly-NiO/Nb:SrTiO3 Based Resistive Switching...

Poly-NiO/Nb:SrTiO₃ Based Resistive Switching Device for Nonvolatile Random Access Memory

Abstract:

The bipolar resistive switching characteristic of Ag/poly-NiO/Nb:SrTiO3/In device has been investigated in this letter. The current-voltage characteristics of the device shows reproducible and pronounced bipolar resistive switching after 2V forming process and the resistive switching ratio RHRS/RLRS can reach 104 at the read voltage -0.5V. Multilevel memories can be realized by changing the max reverse voltages and show well retention characteristic even after several sweeping cycles. The results have been discussed in terms of carrier injection process via defects at the interface of the poly-NiO and Nb:SrTiO3.

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Periodical:

Advanced Materials Research (Volumes 605-607)

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1944-1947

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.605-607.1944

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Online since:

December 2012

Authors:

Cheng Hu, Yong Dan Zhu

Keywords:

Bipolar Resistive Switching, Carrier-Injection, Forming Process, Multi-Level Memory

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