The Structure and Light Emitting of Silicon-Doped Boron Nitride Nanotubes

Shi Feng Xu; Dan Xu

doi:10.4028/www.scientific.net/AMR.616-618.1898

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 616-618The Structure and Light Emitting of Silicon-Doped...

The Structure and Light Emitting of Silicon-Doped Boron Nitride Nanotubes

Abstract:

In this paper, we report the structural and optical properties of bamboo-like silicon-doped boron nitride nanotubes. The morphologies and structures of the nanotubes were characterized using electron microscopy and FTIR spectroscopy. Three strong broad peaks centered at 1.76ev, 2.20ev, 2.40ev were observed from the room-temperature PL spectrum of the nanotubes. The spectrum suggested the existence of multifold energy levels within the band gap.

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Advanced Materials Research (Volumes 616-618)

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1898-1901

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https://doi.org/10.4028/www.scientific.net/AMR.616-618.1898

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Online since:

December 2012

Authors:

Shi Feng Xu, Dan Xu

Keywords:

Boron Nitride, FT-IR, Light Emitting, Nanotube

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