A Simple Method to Prepare Indium Oxide Nanoparticles on Si (110)

Maryam Amirhoseiny; Hassan Zainuriah; Sha Shiong Ng

doi:10.4028/www.scientific.net/AMR.620.193

Paper Titles

XRD Analysis of Cu-Al Interconnect Intermetallic Compound in an Annealed Micro-Chip
p.166

Discovery of WO₃/TiO₂ Nanostructure Transformation by Controlling Content of NH₄F to Enhance Photoelectrochemical Response
p.173

XRD and EDXRF Analysis of Anatase Nano-TiO₂ Synthesized from Mineral Precursors
p.179

X-Ray Diffraction Study of High Velocity Oxy-Fuel (HVOF) Sprayed Cr₃C₂-NiCr Coating
p.186

A Simple Method to Prepare Indium Oxide Nanoparticles on Si (110)
p.193

The Effect of Stoichiometry to the Phase Formation of Barium Titanate
p.198

Heterogeneous Combustion of Ti/Si/C Powders with Estimated Ti₃SiC₂ Routes Morphologies
p.203

Thermal, Electrical and Physical Properties of Recycled Copper Filled Epoxy Composites
p.208

X-Ray and Morphological Characterization of Al-O Thin Films Used for Vertically Aligned Single-Walled Carbon Nanotube Growth
p.213

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 620A Simple Method to Prepare Indium Oxide...

A Simple Method to Prepare Indium Oxide Nanoparticles on Si (110)

Abstract:

Nanocrystalline indium oxide (In₂O₃) thin film was synthesized by thermal evaporation of indium on unheated Si (110) substrates, followed by wet oxidation process. XRD analyses showed the deposited In2O3 film is of high quality and have cubic structure. The Scherrer structural analysis revealed that the In₂O₃ film grown on Si (110) orientation has nanocrystalline structure with crystallite size of 2.53 nm. Photoluminescence (PL) spectrum showed a strong and broad emission at 574.9 nm with two shoulders at 547 nm and 604 nm which related to oxygen vacancies. Finally, the band gap of nanocrystalline In₂O₃ as determined from the PL spectrum was 2.15± 0.15eV.

You might also be interested in these eBooks

Advanced X-Ray Characterization Techniques

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 620)

Pages:

193-197

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.620.193

Citation:

Cite this paper

Online since:

December 2012

Authors:

Maryam Amirhoseiny, Hassan Zainuriah, Sha Shiong Ng

Keywords:

In₂O₃ Nanocrystal, Photoluminescence (PL), Si (110) Substrate, Wet Oxidation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Wagner, T. Sauerwald, C.D. Kohl, T. Waitz, C. Weidmann and M. Tiemann: Thin Solid Films, Vol. 517 (2009), pp.6170-6175.

DOI: 10.1016/j.tsf.2009.04.013

Google Scholar

[2] H. Kajii, A. Sakakibara, H. Okuya, T. Morimune and Y. Ohmori: Thin Solid Films, Vol. 499 (2006), pp.415-419.

DOI: 10.1016/j.tsf.2005.06.080

Google Scholar

[3] P.M. Babu, B. Radhakrishnaa, G.V. Rao, P.S. Reddy and S. Uthanna: J Optoelectron Adv. M. Vol. 6 (2004), pp.205-210.

Google Scholar

[4] U. Betz, M. Kharrazi Olsson, J. Marthy, M.F. Escolá and F. Atamny: Surf. Coat. Technol., Vol. 200 (2006), pp.5751-5759.

DOI: 10.1016/j.surfcoat.2005.08.144

Google Scholar

[5] M. Amirhoseiny, Z. Hassan and S.S. Ng, M.A. Ahmad: Journal of Nanomaterials, 2011 (2011).

Google Scholar

[6] Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano and F. Semond: Phys. Status Solidi C, Vol. 6 (2009), p. S1020-S1023.

DOI: 10.1002/pssc.200880878

Google Scholar

[7] C. Hsin, J. He, C. Lee, W. Wu, P. Yeh, L. Chen and Z. Wang: Nano letters, Vol. 7 (2007), pp.1799-1803.

Google Scholar

[8] W. Kern and D.S.R. Center: RCA Rev, Vol. 31 (1970), pp.187-206.

Google Scholar

[9] H. Schoeller and J. Cho: Journal of Materials Research, 24 (2009), pp.386-393.

Google Scholar

[10] J.I. Langford and A.J.C. Wilson: J. Appl. Crystallogr., 11 (1978), pp.102-113.

Google Scholar

[11] H. Cao, X. Qiu, Y. Liang, Q. Zhu and M. Zhao: Appl. Phys. Lett., 83 (2003), pp.761-763.

Google Scholar