Photoluminescence Properties of Porous Silicon Nanostructures (PSiNs) with Optimum Electrolyte Volume Ratio of Photo-Electrochemical Anodization

Abstract:

Porous silicon nanostructures light-emitting diode (PSiNs-LED) will be a device for future flat screen display and can be high in demand. Main purpose of this experiment is to determine the photoluminescence properties of porous silicon nanostructures (PSiNs). PSiNs samples were prepared using photo-electrochemical anodization. P-type silicon substrate was used for this experiment. For the formation of PSiNs, a fixed current density (J=20 mA/cm²) and 30 minutes etching time was applied for the variety of electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C₂H₅OH), HF48%:C₂H₅OH, were used for samples 3:1, 2:1, 1:1, 1:2 and 3:1. The effective photoluminescence properties was observed for sample C.

• Periodical: Advanced Materials Research (Volume 620)
• Pages: 40-44
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.620.40
• Online since: December 2012
• Authors: Maslihan Ain Zubaidah, N.A. Asli, S.F.M. Yusop, Mohamad Rusop, Saifollah Abdullah
• Keywords: Photoluminescence (PL), Porous Silicon Nanostructures

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