Misfit Dislocation Reduction of InxGa1-xN/GaN Heteroepitaxy Using Graded Layer

Anisul Islam; Durjoy Dev; Md. Arafat Hossain; Md. Rafiqul Islam; A. Yamamoto

doi:10.4028/www.scientific.net/AMR.626.500

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 626Misfit Dislocation Reduction of InxGa1-xN/GaN...

Misfit Dislocation Reduction of In_xGa_1-xN/GaN Heteroepitaxy Using Graded Layer

Abstract:

The performances of heterostructural devices are often limited by misfit dislocation. In this paper, a theoretical approach for misfit dislocation reduction of wurtzite In_xGa_1-xN/GaN is presented. The linear and exponential grading techniques have been modeled for the reduction of dislocation. An energy balance model has been taken into consideration and modified for wurtzite structure to evaluate the misfit dislocation density. The value of misfit dislocation has been reduced from 7.112×10¹⁰ cm^-2 to 6.19×10⁶ cm^-2 and 7.039×10¹⁰ cm^-2 to 6.121×10⁶ cm^-2 at the plane 1/3<> {} and 1/3<>{} respectively for linear grading. In case of exponential grading the dislocation density has been reduced to 2.762×10⁵ cm^-2 for both slip systems. Because of tapered grading coefficient a tapered dislocation profile has been reported in case of exponential grading technique. Finally, a comparative study has been shown among without graded, linear and exponential grading.

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Periodical:

Advanced Materials Research (Volume 626)

Pages:

500-503

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.626.500

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Online since:

December 2012

Authors:

Anisul Islam, Durjoy Dev, Md. Arafat Hossain, Md. Rafiqul Islam, A. Yamamoto

Keywords:

Critical Thickness, Exponential Grading, Linear Grading, Misfit Dislocation

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