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Interfacial Characteristics for LaAlO3 Gate Dielectric on S Passivated GaAs Substrate

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Abstract:

In this work, we present the results of an investigation into the effectiveness of varying ammonium sulphide (NH4)2S concentrations in the passivation of n-type GaAs. Samples were degreased and immersed in aqueous (NH4)2S solutions of concentrations 22% and 10%for 10 min at 295 K, immediately prior to plasma enhanced atomic layer deposition of LaAlO3. The chemical bonding state of (NH4)2S treated GaAs surface were investigated by X-ray photoelectron spectroscopy (XPS), which indicate that Sulfur passivation can reduce intrerfacial GaAs-oxide formation. Transmission electron microscopy (TEM) was implemented to characterize the interface morphology. Finally, capacitance-voltage (C-V) and leakage current density-voltage (J-V) measurement were used to characterize the electrical properties of LaAlO3 films.

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Periodical:

Advanced Materials Research (Volume 629)

Pages:

127-130

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.629.127

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Online since:

December 2012

Authors:

Ting Ting Jia, Xing Hong Cheng, Duo Cao, Da Wei Xu, Chao Xia, Zhong Jian Wang, Yue Hui Yu

Keywords:

Atomic Layer Deposition, Capacitance, Current Density, High-K Dielectric Thin Films, III-V Semiconductors

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References

[1] C.J. Sandroff, R.N. Nottenburg, J.C. Bischoff, R. Bhat, Appl. Phys. Lett. 51 (1987) 33.

Google Scholar

[2] J.L. Lee, D. Kim, S.J. Maeng, H.H. Park, J.Y. Kang, Y.T. Lee, J. Appl. Phys. 73 (1993) 3539.

Google Scholar

[3] T. Scimeca, Y. Watanabe, F. Maeda, R. Berrigan, M. Oshima, Appl. Phys. Lett. 58 (1991) 1167.

Google Scholar

[4] M. Basletic, J. L. Maurice, C. Carretero, G. Herranz, O. Copie, M. Bibes, E. Jacquet, K. Bouzehouane, S. Fusil, and A. Barthelemy, Nature Mater. 7 (2008) 621.

DOI: 10.1038/nmat2223

Google Scholar

[5] J. Q. Chen, X. Wang, Y. H. Lu, A. Roy Barman, G. J. You, G. C. Xing, T. C. Sum, 5 S. Dhar, 1 Y. P. Feng, 3 Ariando, Q. -H. Xu, and T. Venkatesan, Appl. Phys. Lett. 98 (2011)041904.

DOI: 10.1063/1.3543840

Google Scholar

[6] R. J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, S. De Gendt, and M. Heyns, Appl. Phys. Lett. 83 (3) (2003) 533. -2 -1 0 1 2.

DOI: 10.1063/1.1592639

Google Scholar

1x10.

Google Scholar

[3] 2x10.

Google Scholar

[3] 3x10.

Google Scholar

[3] 4x10.

Google Scholar

[3] 5x10.

Google Scholar

[3] 6x10.

Google Scholar

[3] 7x10.

Google Scholar

[3] Capacitance density(nF/cm 2) Gate bias(V) -1 0 1.

Google Scholar

[10] -12.

Google Scholar

[10] -11.

Google Scholar

[10] -10.

Google Scholar

[10] -9.

Google Scholar

[10] -8.

Google Scholar

[10] -7.

Google Scholar

[10] -6.

Google Scholar

[10] -5 Leakage current density(mA/cm.

Google Scholar

[2] ) Gate bias(V).

Google Scholar

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